The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate that switching of crystal structure as well as domain rotation occur in spinel MnV 2 O 4 with applied magnetic field. Such large magnetoelastic effects arise from a strong coupling between spin and orbital degrees of freedom for the V ions in this compound.
The paper reports the outline of the developed electron beam recorder (EBR) for the purpose of developing future optical disk storage media. A rotation stage is developed and is installed to the EBR. The EBR using the retarding field can vary the beam energy only by adjusting the high voltage for the substrate (10 keV to 50 keV)
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.