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Control of band offsets on hetero-junctions is important to achieve a higher efficiency amorphous silicon-based solar cell. It is expected to improve cell's properties of Voc and FF by suppressing band offsets on the junction. The configuration of conduction band level (Ec), valence band level (Ev) and Fermi level (Ef) based on vacuum level governs the formation of band offset on the junction. We...
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