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An improved hot-hole-involved interface-state generation model is proposed for hot-carrier injection (HCI) degradation in high-voltage (HV) nMOSFETs. This model is based on experiments over a wide range of temperatures, voltage conditions, simulation results, and the underlying physical mechanisms. The model provides a thorough picture of an HCI system in HV nMOSFETs, with hot-hole injection related...
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