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Electrostatically actuated microstructures with high-aspect-ratio laminated-beam suspensions have been fabricated using a 0.8 μm three-metal CMOS process followed by a sequence of three maskless dry-etching steps. Laminated structures are etched of the CMOS silicon oxide, silicon nitride, and aluminum layers. The key to the process is the use of the CMOS metallization as an etch-resistant mask to...