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Background
The erosion of the early mortality advantage of elective endovascular aneurysm repair (EVAR) compared with open repair of abdominal aortic aneurysm remains without a satisfactory explanation.
Methods
An individual‐patient data meta‐analysis of four multicentre randomized trials of EVAR versus open repair was conducted to a prespecified analysis plan, reporting on mortality, aneurysm‐related...
Anodic-aluminum-oxide (AAO) membranes are fabricated and bonded on the surface of self-assembled InGaAs quantum dots (QDs) samples. The photoluminescence peak wavelengths for the QDs samples are fixed, and the optical intensity is enhanced from the photonic-crystal radiation modes of the AAO periodic nano-hole array.
The conversion efficiency of broadband InGaAs quantum dots-in-a-well (DWell) solar cells has been improved by optimizing the p-type doping and growth temperature for the DWell. The solar efficiency (η) is 130% times of the counterpart of GaAs baseline cell. Moreover we obtain the best photovoltaic result by inserting matrix pattern instead grid pattern and using wet etching to enhance the conversion...
In order to enhance absorption at infrared range for GaAs based solar cell, we insert the nine-layer of vertically coupled quantum dots (VCQDs) into the active layer. We fine modulated the GaAs spacer thickness of coupled In0.75Ga0.25As QDs, and investigated the effects on photovoltaic response. For the open-circuit voltage (Voc), the values decreases from 0.61 V to 0.55 V as the spacer thickness...
Self-organized Au-Ge nano-dots and SiO2 are used as etching mask to fabricate quantum dot (QDs) nano-pillars. The dry etching processes are used to control pillar height. Single nano-pillar characteristics are analyzed by cryogenic cathodoluminescence measurement.
Continuous-wave and pulse lasing are achieved at 1.18µm for In0.75Ga0.25As quantum dots structure grown on GaAs substrate. The threshold current density of 700A/cm2, slope efficiency of 0.279mW/mA, and maximum output power of 40mW are obtained.
In order to enhance absorption at infrared range for GaAs based solar cell, we insert the nine-layer of vertically coupled InGaAs quantum dots (QDs) into the active layer.
Anodic-aluminum-oxide (AAO) membrane was bonded on the surface of self-assembled InGaAs quantum dots (QDs) samples to investigate the photonic crystal effect and optical coupling effect.
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