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Multi Level Cell (MLC) Phase Change Memory (PCM) is an enhancement of PCM technology, which provides higher capacity by allowing multiple digital bits to be stored in a single PCM cell. However, the retention time of MLC PCM is limited by the resistance drift problem and refresh operations are required. Previous work shows that there exists a trade-off between write latency and retention—a write scheme...
Due to the scalability and large leakage power, dynamic random-access memory (DRAM) has a lot of challenges in scaling. As an alternative, phase change memory (PCM) has demonstrated promising potential to serve as the main memory in deep submicrometer regime. The broad resistance range of PCM cells enables several cell modes with various densities, pertaining to multiple level cell (MLC), triple state...
Constructing a highly scalable and dense main memory subsystem with large access bandwidth has become a major challenge for modern computing systems. Traditional memory technologies, like DRAM and NAND Flash, suffer from either poor scalability or limited access bandwidth. Recent studies have identified emerging Phase Change Memory (PCM) as one of the most promising low power main memory technology...
Phase change memory (PCM) recently has emerged as a promising technology to meet the fast growing demand for large capacity memory in modern computer systems. In particular, multi-level cell (MLC) PCM that stores multiple bits in a single cell, offers high density with low per-byte fabrication cost. However, despite many advantages, such as good scalability and low leakage, PCM suffers from exceptionally...
Phase Change Memory (PCM) recently has emerged as a promising memory technology. However it suffers from limited write endurance. Recent studies have shown that the lifetime of PCM cells heavily depends on the RESET energy. Typically, larger than optimal RESET current is employed to accommodate process variation. This leads to over-programming of cells, and dramatically-shortened lifetime. This paper...
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