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In present paper, we discuss the first principle optoelectronic properties for ZnGa2X4 (X= S, Se) compounds. The current work have been carried out using full-potential linearized augmented plane wave (FP-LAPW) mechanism, employing density functional theory (DFT) within Perdew-Burke-Ernzerhof (PBEsol) exchange correlation approximation over Wien2k package. A direct band gap of 2.38eV and 1.51eV is...
Present paper is a systematic analysis of electronic and optical properties of CuGaS2 ternary chalcopyrite semiconductor which having wide applications in area of optoelectronics. Complete knowledge of electronic structural behavior of these materials is a challenging part for researchers. All the calculations presented here are preformed using mBJ exchange correlation potential under density functional...
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