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We have simulated two nanoscaled Fin-FET devices with different body material (InGaAs and Si) in order to analyse the effect of the Line Edge Roughness (LER) and Metal Gate Workfunction (MGW) variabilities. We have used a workload manager to deploy the simulations and to collect the data across diferent computational infrastructures. We have found that for most of the figures of merit, the InGaAs...
The on- and off-current variability due to TiN metal grain workfunction fluctuations in a 10.4 nm gate length In0.53Ga0.47As FinFET is analysed using two in-house simulation tools based on the finite element method: a 3D Drift-Diffusion device simulator and a 3D ensemble Monte Carlo simulator, that include quantum-corrections through the density gradient approach. The Id-Vg characteristics have been...
Multi-scale modelling of the electron transport via a metal-semiconductor interface is carried out by coupling ab initio calculations (DFT) with three-dimensional finite element ensemble Monte Carlo simulations. The results for the Mo/GaAs (001) interface show that variations of the electronic properties with the distance from the interface have a strong impact on the transport characteristics. In...
A 3D Finite Element Monte Carlo simulation with 2D Schro¨dinger based quantum correction are employed to forecast the performance of SOI Si FinFET devices scaled to gate length of 10.7 nm. The performance of these devices are greatly affected by the exact device geometry and thus the accurate description of cross-sections is essential. We chose three cross-sections: rectangular (REC), wide- (WTRI)...
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