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The composite MoS2/MoOx≤3 nanobelts are synthesized by hydrothermal process at 500 K for 48 h. An asymmetric, Schottky-Omhic contacted MoS2/MoOx≤3 nanobelts can be served as a switching resistance memory devices if the applied sweep voltage is high. The data storage effects can be clearly obtained after performing a cycle sweep voltage. The data storage effects mediated by the magnitude voltage have...