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In this paper, we investigated the characteristics of Ge junction diodes and gate-last p- and n-metal-oxide-semiconductor field-effect transistors with the atomic-layer-deposited- Al2O3 gate dielectrics. The magnitudes of the rectifying ratios for the Ge p+-n and n+-p junctions exceeded three and four orders of magnitude (in the voltage range of plusmn1 V), respectively, with accompanying reverse...
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