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A 4k bits nonvolatile high-speed nanogap memory device was fabricated with a newly developed vertical nanogap structure and its memory characteristics were evaluated. The newly developed vertical nanogap structures realized controllable electrode gap and higher yield compared to the initial phase lateral type nanogap structure. The structures were integrated on a CMOS chip. The specially embedded...
NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Recently, there are two different directions to meet market demands. One is lowering bit cost and increase memory density to the utmost limit, which is...
Today NAND flash memory is used for data and code storage in digital cameras, USB devices, cell phones, camcorders, and solid-state disk drives. To satisfy the market demand for lower cost per bit and higher density nonvolatile memory, in addition to technology scaling, 2 b/cell MLC technology was introduced. Recently MLC NAND flash memories with more than 2 b/cell have been reported. To meet market...
A 16 Gb 16-level-cell (16LC) NAND flash memory using 70 nm design rule has been developed . This 16LC NAND flash memory can store 4 bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash, and quadruple bit density comparing to single-bit (SLC) NAND flash memory with the same design rule. New programming method suppresses the floating gate coupling effect and enabled...
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