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The InAs quantum dot (QD) structures grown on (100) 2°, 6°, 10°, 15° off-angles to (111)A GaAs substrate have been investigated by atomic force microscopy (AFM) and cryogenic photoluminescence (PL). The exact-angle InAs/GaAs is used as the reference sample. The blue shift of PL peak spectra with increasing misoriented scales has also been observed experimentally. In this work, we demonstrated that...
Donor doping of IIIA elements, including Ga and In, was employed in the growth of Hg 1-x Cd x Te (MCT) heterolayers consisting of a wide-bandgap (x = 0.4) layer on the top of a narrow-bandgap one were grown on (111)B CdTe substrates by liquid phase epitaxy with a Te-rich solution. The doping properties of selected impurities in the cap layer (i.e., the wide-bandgap layer)...
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