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Thin films of amorphous and polycrystalline indium zinc oxide (IZO) having various In/(In+Zn) nominal compositions from 0.3 to 0.9 were grown by the pulsed laser deposition technique at room temperature or at 400°C on oxidized Si and quartz substrates. After deposition, the films were gamma irradiated at doses of 10, 20 and 30kGy under Ar atmosphere. Grazing incidence X-ray diffraction investigations...
The modifications of the microstructure of yttria-stabilized cubic zirconia and silicon carbide single crystals implanted with high concentrations of noble gas ions and subsequently annealed at high temperature were characterized using RBS/C, XRD and TEM. It is found that the annealing behavior is strongly dependent on both the material and the implanted noble gases. Ar-implanted yttria-stabilized...
We present experimental results and a preliminary analysis of the energy loss for approximately 2MeV/amu energy H and Li ions in metal foils. The experiments were performed in transmission geometry with the detector aligned with the beam. We selected Ni with special emphasis on the ferro-paramagnetic phase transition and for reference Ta foils which is free of phase transitions in the range from the...
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