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Solutions and emulsions containing water, hydrocarbon surfactant and CO 2 were utilized to remove post-etch residues from vias and trenches in low dielectric constant (k) patterned porous methylsilsesquioxane (pMSQ) interlayer dielectrics. The time for cleaning and rinsing was reduced to 2min for 0.13μm features. The vias and trenches were cleaned with a hydrocarbon surfactant, polyoxyethylene...
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