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This work presents a novel insight to the aspects of silicon surface passivation and the influence of thin intermediate layers generated by chemically grown silicon oxides. Strong light induced effects on passivation properties are investigated. After exposure to light (0.25 suns) for about 60 s, samples based on a PECVD layer system consisting of SiNx and SiO2 deposited on crystalline silicon with...
The material quality of multicrystalline silicon is influenced by crystal defects and contaminations like transition metal precipitates. During solar processing these defects can be restructured and change their electrical activity. The purpose of this work is to study the impact of different solar cell processing steps on the distribution and electric activity of transition metal precipitates like...
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