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The electrical as well as the structural properties of La 2 O 3 thin films on TiN substrates were investigated. Amorphous stoichiometric La 2 O 3 thin films were grown at 300°C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD) 3 ] and H 2 O as precursors. Post-annealing of the grown film induced dramatic...
Amorphous stoichiometric lanthanum oxide (La 2 O 3 ) thin films were grown on Si(100) by atomic layer deposition technique using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione and water (H 2 O) as precursors. The structural and electrical properties were investigated by transmission electron microscope, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), current–voltage...
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