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An investigation of the low-temperature liquid-phase epitaxy (LTLPE) process at 400–650 °C for crystallization of AlGaAs heterostructures with ultrathin (2–100 nm) layers has been carried out. In particular, low-threshold quantum-well heterolasers (threshold current density j th as low as 120 A cm −2 ) and high-efficiency solar cells (efficiency as high as 24.0–24.7% under AMO conditions...