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We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at $\sim 1060$ nm, on GaAs substrate. The low-frequency operation of the integrated circuit was measured and obvious negative differential resistance regions were shown in the electrical and optical output. The electrical and optical bistability were measured, and the peak and valley...
We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at around 1060 nm, on GaAs substrate. The basic DC-characteristics of the integrated circuit was measured and analyzed. Obvious negative differential resistance regions were shown in the electrical and optical output. The device has potential applications in biomedicine and optical interconnects.
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