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We have investigated the controllability of the effective work function (phim,eff) of TiN as a work-function-determining metal (WFM) for various gate-electrode structures in HfSiON MOSFETs. phim,eff was controllable from 4.7 to 4.44 eV by changing the TiN thickness from 30 to 2 nm in poly-Si/TiN gate electrodes, without any distinct increase in EOT. Therefore, thin-TiN and thick-TiN WFMs are preferred...
We have clarified that, in a metal/high-k gate stack, as well as the variability introduced by random dopant fluctuations (RDF), the threshold voltage variability (TVV) is attributable to the crystal structure and grain size in the metal gate. We have successfully eliminated this additional factor by reducing the grain size in the metal gate. We demonstrated that the incorporation of C into TiN metal...
This study aims to investigate the application of a technique to separate bulk hole trap effects from interface state degradation in NBTI to understand hole traps behavior including MOSFET fabrication process dependence. A gate last process is used to fabricate the pMOSFETs with HfSiON/TiN gate stacks. Results show that RTA is an effective method for reducing pre-existing hole traps, while nitridation...
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