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The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy, and structural transformation in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising...
We have investigated the controllability of the effective work function (phim,eff) of TiN as a work-function-determining metal (WFM) for various gate-electrode structures in HfSiON MOSFETs. phim,eff was controllable from 4.7 to 4.44 eV by changing the TiN thickness from 30 to 2 nm in poly-Si/TiN gate electrodes, without any distinct increase in EOT. Therefore, thin-TiN and thick-TiN WFMs are preferred...
We have clarified that, in a metal/high-k gate stack, as well as the variability introduced by random dopant fluctuations (RDF), the threshold voltage variability (TVV) is attributable to the crystal structure and grain size in the metal gate. We have successfully eliminated this additional factor by reducing the grain size in the metal gate. We demonstrated that the incorporation of C into TiN metal...
We clarified the impact of the fifth material incorporation into HfSiON technology for Vth control on the reliability of high-k/metal gate stacks CMOSFETs. HfMgSiON is remarkably effective for suppressing electron traps, giving rise to a dramatic PBTI lifetime improvement for nMOSFETs. With pMOSFETs, Al incorporation is effective for the thermal deactivation of hole traps, resulting in NBTI lifetime...
We have investigated the time dependent dielectric breakdown (TDDB) characteristics for a high-k/metal gate pMOSFET under inversion stress. We found that electrons, injected from the cathode, being minority carriers in the gate leakage current play an important role in determining TDDB lifetime and found that the presence of oxygen vacancies in HfSiON determine the electron current mechanism in HfSiON...
A novel technique for the control of nitrogen (N) and oxygen (O) concentrations in the metal/high-k gate stacks is proposed. By inserting a reactive metal (Ti) layer remote from work function metal and high-k insulator, N and O concentration is easily decreased. This technique effectively suppresses the EOT increase after high-temperature annealing. Moreover, improved electron mobility and decreased...
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