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Implementation of thick Cu inductor in IC chips has been a highly challenging task for Far-backend packaging industry. One of the major concerns is that the thicker Cu trace wrapped by re-passivation polymer layers (Polymer-1 & Polymer-2) is often accompanied by remarkable internal stress in the overall package, which is plagued with the risk of layer-to-layer delamination and/or interface micro-cracks...
Polymer film is general used for stress buffer and dielectric film for Wafer Level Chip Scale Package (WLCSP). Chemical resistance and mechanical resistance of polymer films usually get worse after several processes with chemicals or heat. Weak chemical or mechanical resistance will induce polymer film cracking. Polymer cracking further induces humidity penetration into RDL (Re-distribution Layer)...
Comparison between simulation and measurement of Current-Voltage curves for CdS cylinders embedded in P3HT. Using interface recombination makes the curve of simulation to match the curve of measurement.
The defectivity control of replacement metal gate (RMG) chemical mechanical polishing was important for high-k metal gate (HKMG) process. Micro-scratches of RMG CMP easily caused shorting or open of devices. In this study, the micro-scratch reduction of aluminum chemical mechanical polishing (AlCMP) has been investigated to provide solutions for preventing the formation of micro-scratches. Micro-scratches...
The two bonds important in BCB bonding are discussed. According to the principles of silicon oxide bonding and the nature of these two bonds, we established the most likely mechanism for BCB to oxide bonding. We compare BCB to PECVD oxide bonding with BCB to thermal oxide bonding and investigate the difference in bonding strength. We also observe the BCB surface changes before and after bonding.
A method to fabricate complex structures on non-planar surfaces by utilizing a transfer method is presented. 3-dimensional and high-aspect-ratio microelectromechanical systems (MEMS) structures are transferred to flexible membranes, and can be further transferred to any non-planar surfaces. Here, we used a structure formed on a silicon-on-insulator (SOI) wafer by deep reactive-ion etching (DRIE) as...
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