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Thinned III-V multi-junction solar cells can realize the advantages of being high-efficiency and light-weight, as such these cells meets the requirement for higher W/kg and W/m3 solar panels. Here we report the development results of a thin-film InGaP/GaAs dual-junction (TF2J) solar cell. In this paper, we study the radiation resistance of the TF2J cells with efficiency of 20-23% under AM0, 1sun at...
Recently, InGaP/GaAs/Ge 3-junction solar cells are widely used for space because of their higher conversion efficiency and better radiation-resistance compared to GaAs and Si solar cells. In this study, effects of base carrier concentration in GaAs and InGaP sub-cells upon their radiation resistance are analyzed by using radiative recombination lifetime and damage constant K for minority-carrier lifetime...
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