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We measured RTN characteristics in NAND flash cell array and test structure having 27 nm design rule depending on different program and erase states. From these measured results, we analyzed the trap properties along the active width direction from of NAND flash cell. Using special analysis methods, we verified the validity of this characterization tool and applied it to various processed NAND flash...
RTS (random telegraph signal)-like fluctuation in Gate Induced Drain Leakage (GIDL) current of Saddle-Fin (S-Fin) type DRAM cell transistor was investigated for the first time. Furthermore, two types of fluctuation which have apparently different ??high (average time duration of high leakage state) to ??low (average time duration of low leakage state) ratio were investigated, and it was found that...
We studied random telegraph noise (RTN) of n-type and p-type silicon nanowire transistors (SNWT) for the first time and derived accurate vertical and lateral trap location equations in nanowire structure. Using the derived equations, accurate trap locations were extracted in the devices with single trap as well as multiple traps.
Recently the cell integration density of NAND flash memory is increasing rapidly due to its simple structure suitable for high resolution lithography. Therefore, the reduction of cell size has been the most important issue. However, with the increase in the number of the cells and the scale-down of the cell size, the NAND cell string has some problems such as small on-cell current and poor program/erase...
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