The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper describes the development and fabrication of two 600 GHz resistive sub-harmonic down-conversion mixer submillimeter-wave integrated circuits (S-MMICs), formed by a combination of a frequency multiplier-by-six sub-circuit and a fundamental mixer sub-circuit. The mixer circuits were designed in a grounded coplanar waveguide transmission line technology (GCPW) with 14 μm and 7 μm ground-to-ground-spacing...
We present low-noise amplifiers (LNA) that have been developed in the framework of two pre-qualification ESA projects for frequencies between 54 and 229 GHz for the METOP-SG satellite program. The main goal of these satellites is to provide data for operational weather forecast and climate change. Specifically temperature and water vapor measurements can be only achieved by advancing the current state...
Millimeter- and submillimeter-wave integrated circuits (MMICs and S-MMICs) and modules developed at the Fraunhofer IAF for manifold applications in the frequency range up to 700 GHz are presented. These circuits use the advanced metamorphic high electron mobility transistor (mHEMT) technology based on the InAlAs/InGaAs material system on 4″ GaAs substrates. The presented circuits are key components...
In this paper, we present the development and characterization of an H-band (220 – 325 GHz) low-noise amplifier MMIC, realized in metamorphic HEMT technology with a gate length of 35 nm. The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cascode configuration. The LNA circuit achieves a linear gain of 26.3 dB with a 3-dB-bandwidth from 218...
This letter presents a single chip × 12 frequency multiplier MMIC for the W-band that is realized in a 100 nm metamorphic HEMT technology. To obtain the × 12 multiplication factor a multiplier chain of a doubler, a tripler and a doubler has been cascaded. The circuit has a 3 dB bandwidth of 15 GHz from 85 to 100 GHz. At 94 GHz, the multiplier achieves a saturated output power of more than 1 dBm and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.