Search results for: Duanlin Que

Items from 1 to 20 out of 74 results

article

Impact of solar irradiance intensity and temperature on the performance of compensated crystalline silicon solar cells

Chengquan Xiao, Xuegong Yu, Deren Yang, Duanlin Que

Solar Energy Materials and Solar Cells > 2014 > 128 > Complete > 427-434

Low-cost upgraded metallurgical grade silicon (UMG-Si) with inherent boron (B) and phosphorus (P) compensation is a novel material for photovoltaic application. This paper presents the impact of solar irradiance intensity and temperature on the performance of compensated crystalline silicon solar cells. For the same rated output power, compensated crystalline silicon solar cells generate less electricity...

article

Determination of the Boron and Phosphorus Ionization Energies in Compensated Silicon by Temperature-Dependent Luminescence

Chengquan Xiao, Deren Yang, Xuegong Yu, Luelue Xiang, more

Silicon > 2017 > 9 > 2 > 147-151

The determination of boron and phosphorus ionization energies in compensated silicon is very important for assessing the ionization level of dopants and their interaction with each other. In this paper, we achieved the boron and phosphorus ionization energies in compensated silicon by temperature-dependent luminescence for the first time. The results show that the boron and phosphorus ionization energies...

article

Evolution of the sensitized Er³⁺ emission by silicon nanoclusters and luminescence centers in silicon-rich silica

Lingbo Xu, Dongsheng Li, Lu Jin, Luelue Xiang, more

Nanoscale Research Letters > 2014 > 9 > 1 > 1-6

The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main sensitizers of Er³⁺ ions can be tuned from Si NCs...

article

Study on permanent deactivation of the light-induced degradation in p-type compensated crystalline silicon solar cells

Chengquan Xiao, Xuegong Yu, Deren Yang, Duanlin Que

Solar Energy Materials and Solar Cells > 2013 > 117 > Complete > 29-33

Low-cost upgraded metallurgical grade silicon (UMG-Si) with inherent boron (B) and phosphorus (P) compensation is a novel material for photovoltaic application. In this study, we demonstrate the negative impact of the light-induced degradation (LID) on the efficiency of p-type UMG-Si solar cells. By a following illumination at elevated temperatures, the LID effect in the compensated silicon solar...

article

Analysis of the photovoltaic properties of n-type compensated silicon solar cells with the Al-alloyed emitter

Chengquan Xiao, Deren Yang, Xuegong Yu, Rong Wang, more

Journal of Alloys and Compounds > 2013 > 561 > Complete > 28-32

N-type compensated silicon has attracted much attention in recent years, due to its low cost and large tolerance to most impurities. In this paper we have investigated the photovoltaic properties of n-type compensated silicon solar cells with the Al-alloyed emitter. It is found that the open-circuit voltage is strongly influenced by the Al-alloyed emitter depth and the shallow depth might cause shunt...

article

Tailoring Effect of Enhanced Local Electric Field From Metal Nanoparticles on Electroluminescence of Silicon-Rich Silicon Nitride

Feng Wang, Dongsheng Li, Deren Yang, Duanlin Que

IEEE Journal of Selected Topics in Quantum Electronics > 2013 > 19 > 3 > 4602504

The electroluminescence (EL) wavelength tailoring of silicon-rich silicon nitride (SiN $_{x}$ )-based light-emitting devices (LEDs) is achieved by the modulation of the dimensions of Ag nanoparticles. Two EL peaks are observed in our SiN $_{x}$ -based LEDs, both of which are red shifted with the increasing sizes of Ag nanoparticles. A reasonable explanation on this shift is proposed from the calculation...

article

Germanium-doped crystalline silicon: A new substrate for photovoltaic application

Deren Yang, Peng Wang, Xuegong Yu, Duanlin Que

Journal of Crystal Growth > 2013 > 362 > Complete > 140-144

Germanium (Ge)-doped crystalline silicon has attracted much attention in recent years, due to its promising properties for meeting the increasing requirements for photovoltaic applications. This paper has reviewed our recent results on Ge-doped crystalline silicon and corresponding solar cells. It includes that Ge doping improves the fracture strength of crystalline silicon, and suppresses the Boron–Oxygen...

article

Modulation effect of microstructures in silicon-rich oxide matrix on photoluminescence from silicon nanoclusters prepared by different fabrication techniques

Lu Jin, Dongsheng Li, Deren Yang, Duanlin Que

Applied Physics A > 2013 > 113 > 1 > 121-126

The modulation effect of microstructures on photoluminescence (PL) properties of silicon nanoclusters (Si NCs) in silicon-rich oxide (SRO) matrix prepared by electron-beam evaporation (EBE) and magnetron sputtering (MS) is investigated. A loose and porous microstructure is obtained from the SRO film prepared by EBE, while compact microstructure is acquired from that prepared by MS. The Si NCs with...

article

The modulation on luminescence of Er³⁺-doped silicon-rich oxide films by the structure evolution of silicon nanoclusters

Lu Jin, Dongsheng Li, Luelue Xiang, Feng Wang, more

Nanoscale Research Letters > 2013 > 8 > 1 > 1-5

A series of silicon-rich oxide (SRO) and erbium-doped SRO (SROEr) films imbedded with structural tunable silicon nanoclusters (Si NCs) have been fabricated using sputtering followed by post-annealing. The coalescence of Si NCs is found in the films with large Si excess. The energy transfer rate between Si NCs and Er³⁺ is enhanced, but the luminescence efficiencies of both Si NCs and Er³⁺ are reduced...

article

Energy transfer from luminescent centers to Er³⁺ in erbium-doped silicon-rich oxide films

Lu Jin, Dongsheng Li, Luelue Xiang, Feng Wang, more

Nanoscale Research Letters > 2013 > 8 > 1 > 1-6

The energy transfer mechanism between luminescent centers (LCs) and Er³⁺ in erbium-doped silicon-rich oxide (SROEr) films prepared by electron beam evaporation is investigated. Intense photoluminescence of the LCs (weak oxygen bonds, neutral oxygen vacancies, and Si=O states) within the active matrixes is obtained. Fast energy transfer from Si=O states to Er³⁺ takes advantage in the SROEr film and...

article

Influence of the compensation level on the performance of p-type crystalline silicon solar cells: Theoretical calculations and experimental study

Chengquan Xiao, Deren Yang, Xuegong Yu, Xin Gu, more

Solar Energy Materials and Solar Cells > 2012 > 107 > Complete > 263-271

We have investigated the influence of the compensation level on the performance of p-type crystalline silicon solar cells by combining theoretical calculations and experiments. With the compensation level increasing, the fraction of ionized boron (B) atoms increases. The hole mobility is significantly reduced due to the increased ionized impurities scattering, while the electron mobility almost keeps...

chapter

The improvement effect of carrier injection by Ag nanoparticles on the electroluminescence of SiN_x-based LEDs

Feng Wang, Dongsheng Li, Changrui Ren, Deren Yang, more

The 9th International Conference on Group IV Photonics (GFP) > 141 - 143

2012 IEEE 9th International Conference on Group IV Photonics (GFP)

The injection of carriers for SiN_x-based light-emitting devices (LEDs) is improved by the addition of silver nanoparticels (Ag NPs) onto the luminescence matrix. The threshold voltage of the device and the turn-on voltage for thermal emission of carriers are decreased. No visible electroluminescence (EL) from SiN_x-based LEDs can be detected under the Poole-Frenkel transport of carriers. This EL can...

article

Effect of dopant compensation on the performance of Czochralski silicon solar cells

Chengquan Xiao, Deren Yang, Xuegong Yu, Peng Wang, more

Solar Energy Materials and Solar Cells > 2012 > 101 > Complete > 102-106

We have investigated the effect of boron (B) and phosphorus (P) compensation on the performance of Czochralski (CZ) silicon solar cells. Both majority and minority carrier mobilities are significantly reduced by the dopant compensation. Correspondingly, the minority carrier diffusion length becomes smaller. The compensated silicon solar cells show weaker spectral responses and therefore lower short-circuit...

article

The coupling between localized surface plasmons and excitons via Purcell effect

Feng Wang, Dongsheng Li, Deren Yang, Duanlin Que

Nanoscale Research Letters > 2012 > 7 > 1 > 1-6

The coupling between localized surface plasmons (LSPs) within silver nanostructures and excitons in a silicon-rich silicon nitride (SiN_x) matrix has been demonstrated via the Purcell effect. A simple model is employed for the estimation of the Purcell factor as well as the average position of excitons within a luminescence matrix. The estimated average position of the excitons is located at approximately...

article

Phosphorus gettering of precipitated Cu in single crystalline silicon based on rapid thermal process

Xiaoqiang Li, Deren Yang, Xuegong Yu, Duanlin Que

Journal of Crystal Growth > 2010 > 312 > 21 > 3069-3074

In this paper, we have investigated the effect of phosphorus diffusion gettering on the precipitated Cu in silicon via rapid thermal process (RTP). It is found that, for dot-like or star-like precipitates, the RTP-based phosphorus diffusion technique is efficient for gettering out the precipitated Cu. A two-step RTP gettering process is much more effective than a single-step RTP process. Furthermore,...

article

Iron precipitation in as-received Czochralski silicon during low temperature annealing

Yuheng Zeng, Deren Yang, Zhenqiang Xi, Weiyan Wang, more

Materials Science in Semiconductor Processing > 2009 > 12 > 4-5 > 185-188

The iron precipitation in as-received Czochralski (CZ) silicon during low temperature from 300 to 700°C was investigated. It was found that the iron precipitation rate was increased in turn from 300 to 700°C. It was also found that the iron could form small precipitates even at low concentration. Moreover, iron precipitation was revealed as the diffusion-limited process, which could be described properly...

article

Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures

Yuheng Zeng, Deren Yang, Xiangyang Ma, Jiahe Chen, more

Materials Science & Engineering B > 2009 > 159-160 > Complete > 145-148

Oxygen precipitation in heavily phosphorus-doped (P-doped) Czochralski (CZ) silicon subjected to single-step annealing at high temperatures in the range of 1050–1150°C has been investigated. It was indicated that in the heavily P-doped CZ silicon there were more grown-in oxygen precipitates, thus promoting the generation of induced defects and accelerating the Ostwald ripening of oxygen precipitates...

article

Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation

Jiahe Chen, Deren Yang, Xiangyang Ma, Duanlin Que

Materials Science & Engineering B > 2009 > 159-160 > Complete > 235-238

Intrinsic gettering (IG) in germanium-doped Czochralski (Cz) silicon wafer has been investigated through a processing simulation of dynamic random access memory fabrication involved with rapid-thermal-anneal (RTA). Compared with that of conventional Cz silicon, both the good quality defect-free denuded zone (DZ) with a slightly narrower width and the gettering region with a slightly higher density...

article

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

Deren Yang, Jiahe Chen, Xiangyang Ma, Duanlin Que

Journal of Crystal Growth > 2009 > 311 > 3 > 837-841

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance...

article

Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon

Jiahe Chen, Deren Yang, Xiangyang Ma, Duanlin Que

Applied Physics A > 2009 > 94 > 4 > 905-910

The internal gettering (IG) effects involved with a rapid thermal anneal (RTA) in germanium-doped Czochralski silicon (GCz-Si) wafer have been investigated. It was found that germanium doping could enhance the oxygen precipitation in bulk while shrinking the denuded zone width near the surface through pre-RTA at high temperature plus low–high temperature conventional furnace anneals. Rapid cooling...

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INFONA - science communication portal

Search results for: Duanlin Que

Impact of solar irradiance intensity and temperature on the performance of compensated crystalline silicon solar cells

Determination of the Boron and Phosphorus Ionization Energies in Compensated Silicon by Temperature-Dependent Luminescence

Evolution of the sensitized Er³⁺ emission by silicon nanoclusters and luminescence centers in silicon-rich silica

Study on permanent deactivation of the light-induced degradation in p-type compensated crystalline silicon solar cells

Analysis of the photovoltaic properties of n-type compensated silicon solar cells with the Al-alloyed emitter

Tailoring Effect of Enhanced Local Electric Field From Metal Nanoparticles on Electroluminescence of Silicon-Rich Silicon Nitride

Germanium-doped crystalline silicon: A new substrate for photovoltaic application

Modulation effect of microstructures in silicon-rich oxide matrix on photoluminescence from silicon nanoclusters prepared by different fabrication techniques

The modulation on luminescence of Er³⁺-doped silicon-rich oxide films by the structure evolution of silicon nanoclusters

Energy transfer from luminescent centers to Er³⁺ in erbium-doped silicon-rich oxide films

Influence of the compensation level on the performance of p-type crystalline silicon solar cells: Theoretical calculations and experimental study

The improvement effect of carrier injection by Ag nanoparticles on the electroluminescence of SiN_x-based LEDs

Effect of dopant compensation on the performance of Czochralski silicon solar cells

The coupling between localized surface plasmons and excitons via Purcell effect

Phosphorus gettering of precipitated Cu in single crystalline silicon based on rapid thermal process

Iron precipitation in as-received Czochralski silicon during low temperature annealing

Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures

Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon

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