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Tantalum nitride based thin films have been deposited on p-Si (100) and SiO 2 /Si by thermal Atomic Layer Deposition (ALD) using either the Ta(=N t Bu)(NEt 2 ) 3 or a derivative, in which one dialkylamido ligand is substituted by a η 5 -cyclopentadienyl (η 5 -Cp), as metal organic precursors with ammonia as reducing agent. TaN x C y self-limiting...
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