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We report on the growth of n- and p-doped Germanium (Ge) on Ge substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE). Iso-butyl germane, a liquid metal-organic source less toxic than Germane, is used as Ge precursor. We demonstrate the p-doping of Germanium by MOVPE using Trimethylgallium. The influence of the growth parameters for n and p-type doping is studied in order to optimize the morphology,...
Germanium and gallium arsenide have long been used in semiconductor structures and electronic devices. While organometallic vapor phase epitaxy (OMVPE) of gallium arsenide on germanium substrate is quite common in the solar cell industry for satellite panels, the OMVPE of germanium is still relatively uncommon. We report on the development and first use of the new organogermanium precursor, iso-butyl...
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