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We report the formation of atomically flat Si(001) surfaces with C incorporation using thermal dissociation of C 2 H 2 molecules. The resulting surface phases are investigated by scanning tunneling microscopy and found to contain C atoms as much as 0.2 monolayer (ML) without roughening. At low C concentrations, C-induced vacancy line defects are generated on the surface, forming a...
Acetylene molecules adsorbed on the Si(001) surface are studied by scanning tunneling microscope and ab initio pseudopotential calculations. In case of room-temperature adsorption, there are basically two different kinds of di-σ bonding geometries at low coverage: (i) on-top and (ii) end-bridge di-σ configurations. The tetra-σ configurations are not found. Theoretical calculations show that the paired...
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