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Silicon nitride films were synthesized using the new process of photo-chemical vapour deposition (photo-CVD). Films of different compositions were prepared by mercury-sensitized photo-CVD using 2% silane and ammonia as reactant gases. Material properties of interest to device technology have been evaluated. Dependence of the properties of the films on the Si/N ratio and the amount of hydrogen present...
The influence was studied of the concentration of ammonium fluoride (NH 4 F) on the etch rates of silicon nitride films deposited by the mercury-sensitized photochemical vapour deposition method. The composition of the buffered HF was varied between 0 and 40 weight percent (wt%) NH 4 F with 2 to 12 wt% hydrofluoric acid (HF). The etch rates as a function of buffered HF composition...
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