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The comparison between the Si and Si0.8Ge0.2 capping layers shows that the conduction band offset of Si0.8Ge0.2 and Si can form a barrier for electrons, and that it can increase the quantity of carriers on conduction band. From the results of these experiments, the characteristics of carrier blockers formed by hetero structure can be applied in IV-IV optoelectronics devices to achieve higher optical...
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