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Thermal stability of the high-k/In0.53Ga0.47As interface has been analyzed by both physical and electrical methods for the first time. It has been found that As-O and In-O bonds decompose and Ga-O bonds form above 400°C, as shown by XPS and corroborated by TEM, SIMS and EDX. Electrically, this interface decomposition resulted in increased frequency dispersion (accumulation), C-V shift, and mobility...
Analog-to-digital conversion plays an essential role in all kinds of electronics systems, including signal processing, communications and storage. In particular, interpolated flash ADC has been widely used in high-speed systems requiring very high sampling speed. Obviously, practical ADC design is very challenging, which has been dominated by experiences and trial-and-error skills. This is true to...
A new combined AC/DC-coupled output averaging technique for input amplifier design of flash analog-to-digital converters (ADC) is presented. The new offset averaging design technique takes full advantages of traditional DC-coupled resistance averaging and AC-coupled capacitance averaging techniques to minimize offset-induced ADC nonlinearities. Circuit analysis allows selection of optimum resistance...
Using a thin germanium interfacial passivation layer (IPL), for the first time we present surface channel n- and p-MOSFETs on GaAs substrate with TaN gate electrodes and HfO2 dielectric films. We used self-aligned and gate-last processes to fabricate MOSFETs on semi-insulating GaAs substrate. The electrical results from the buried channel and the surface channel-mode transistors are investigated....
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