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Recently, silicon-based ultrashallow junction p+n photodiodes fabricated by pure boron CVD technology (Pure-Bdiodes)[1][2][3] were evaluated for detection in the Extreme Ultra-Violet (EUV) spectral range spanning from 3 nm to 15 nm. A near-theoretical responsivity (0.265 A/W) [4][5] has been achieved at a wavelength of 13.5 nm [3], which is the operating wavelength of the next-generation lithography...
In industrial applications based on extreme-ultraviolet (EUV) radiation, a periodic cleaning of the surface of the used EUV photodetectors is required to prevent the build up of carbon contaminating layers [1][2][3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation EUV lithography [4]. One way to do this is to use aggressive gasses, such as hydrogen...
Silicon-based p+n junction photodiodes have been successfully fabricated for radiation detection in the extreme ultraviolet (EUV) spectral range. The diode technology relies on the formation of a front p+ active surface region by using pure boron chemical vapor deposition (CVD), which grows delta-like B-doped layers on Si substrates. Therefore, the technique can ensure defect-free, highly-doped, and...
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