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In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. The SOG film was deposited at a temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. We demonstrated the use of SOG as gate insulator,...
We performed a Raman scattering study of aluminum induced microcrystallization of thin films of phosphorous-doped hydrogenated amorphous silicon (n + a-Si:H). These thin films of heavily doped n + a-Si:H were prepared by plasma enhanced chemical vapor deposition. Afterwards, aluminum was deposited and followed by an annealing process at 523 K in a nitrogen environment during several...
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