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The radiation hardness of advanced SiGe BiCMOS technologies is being evaluated in order to check their applicability for the front-end readout electronics of the ATLAS Upgrade in the framework of the Super-LHC at CERN. A model that describes the effect of ionizing radiation on bipolar transistors as an exponential term is widely accepted. Nevertheless, this model is not very precise in the bias ranges...
We have performed radiation hardness studies over three different SiGe HBT technologies from IHP (Innovation for High Performance Microelectronics). We have studied gamma and neutron irradiations to study separately ionization and displacement effects. The specific application for which these technologies are being evaluated is the front-end readout electronics of the detector modules of the future...
We have studied the ionization damage produced by gamma irradiation on transistors from three different varieties of SiGe:C HBT technologies from Innovation for High Performance Microelectronics (IHP), Germany. The results show strong gain degradations at the highest doses, with an indication of damage saturation. We did not observe strong differences in radiation tolerance among the three different...
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