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This paper describes development of joint materials using only base metals (Cu and Sn) for power semiconductor assembly. The optimum composition at this moment is Cu8wt%Sn92wt% (8Cu92Sn hereafter) particles: pure Cu (100Cu hereafter) particles = 20:80 (wt% ratio), which indicates good stability under Thermal Cycling Test (TCT, −55°C∼+200°C, 20cycles). The composition indicated to be effective to eliminate...
This paper discloses development and evaluation of die attach material using base metals (Cu and Sn) by three different type of composite. Mixing them into paste or sheet shape for die attach, we have confirmed that one of Sn-Cu components having IMC network near its surface has major role to provide robust interconnect especially for high temperature applications beyond 200°C after sintering.
We have examined printing technology to be adaptable to TSV forming process such as isolation layer forming and via fill. The result shows good possibility.
In the metallization technology for power electronic device, it has been required to develop new material with low cost for operating high-temperature at 300 degree C and highly-reliable interconnection. We have developed new method to fabricate fine metal alloy particles with narrow distribution of particle size from 0.5 to 10µm. We called it as Nanomized method. The fine particles are composed of...
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