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GaN films have been grown on porous silicon at high temperatures (800–1050°C) by metal organic vapor phase epitaxy. The optical properties of GaN layers were investigated by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. PL spectra recorded at 5K exhibit excitonic emissions around 3.36–3.501eV and a broad yellow luminescence at 2.2eV. CL analysis at different electron excitation...
In the present paper, we report results of GaN layers grown at 800 °C by metal organic vapour phase epitaxy (MOVPE) on porous silicon (PS) formed on Si(100) substrates. The surface morphology and the crystallinity of the GaN films were characterized by scanning electron microscope and X-ray diffraction. It was shown that GaN grows on PS preferentially on hexagonal polycrystalline form. The SEM observation...
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