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This paper systematically analyzed the tradeoff between writing operation time and tail bit of LRS, and provided the optimal writing operation time for 1T1R RRAM with the target LRS 500kn and HRS 10Mn. Under three different cases of pulse width, the experiment results all show that the optimal voltage amplitude and step could achieve a good tradeoff between writing operation time and tail bits of...
The unique tail bits retention failure behavior is observed in the RRAM array. Unlike the previous reports on single device or the average value''s retention behavior, quick retention loss of tail bits is found for both LRS and HRS. By statistically characterized such relaxation effect of tail bits, physical models are built to quantitatively describe the relaxation behaviors of LRS and HRS. The correlation...
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