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In this study we investigate the effects of a thin Au interlayer on the formation of cobalt silicide thin films on (001)Si substrate. The presence of a thin Au interlayer in the Co/Au/Co/(001)Si samples was found to decrease the temperature needed for the formation of the CoSi 2 phase by about 100–190 °C compared to that needed for Co/(001)Si samples. The effect on the formation of CoSi ...
Formation of Co germanosilicides on Si 0.8 Ge 0.2 virtual substrates with a Co/Au/Co sandwich thin film after different heat treatments has been investigated. The sequence of phase formation is the same as the reaction of blanket Co thin film with (001)Si. The presence of thin interposing Au layers was found to significantly enhance the formation of low-resistivity CoSi 2 on...
Large-area, vertically aligned silicon nanowire arrays have been successfully fabricated on (001)Si substrates via the redox reactions between silicon and silver ions in the aqueous solution of AgNO3/HF. From SEM and TEM observations, the typical widths of the synthesized SiNWs are in the range of 30-200 nm. The lengths of SiNWs could be tuned from several to tens of micrometers by adjusting the reaction...
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