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This paper deals with the analysis of high speed machines with diametrically magnetized rotor, accounting for slotting effect. On the basis of a two dimensional (2-D) field solutions derived in terms of magnetic vector potential and polar coordinate systems, this paper predicts open-circuit field, armature reaction field, field on load, torque and back emf. In particular, new magnetization modeling...
This paper investigated various approaches to integrate Cu and extra low-k dielectric (ELK, k=2.5~2.2) for dual damascene fabrication. We demonstrate a trench-first hard mask process flow without k degradation by ash-free process and a novel pore sealing technique. In addition, we have extended this pore sealing concept to a via-first PR mask approach for porous ELK of 2.2. Both optimized hard mask...
A systematic study is performed on tantalum carbide (TaC) metal electrode on HfO2 and HfSiON dielectrics using conventional CMOS process. TaC's effective work function (EWF) is estimated to be 4.28 eV on HfO2 using Vfb~EOT methodology, where both interfacial oxide and high-K film thickness are varied and thus charge effect is corrected successfully. Investigation of the EWF dependence on underlying...
A full Cu damascene metallization process was successfully developed for simultaneous formation of sub-0.18 /spl mu/m RF CMOS passive components including circular spiral inductor and MIM capacitor. High quality factor inductor with Q=18 at 1.2 nH was achieved by applying highly uniform Cu CMP process on polishing microns of Cu. Less than 2% Rs uniformity and 70 nm dishing on 95% density Cu line were...
In this work, the dependency of Cu planarization process upon local metal pattern density over a wide density range for 0.13 /spl mu/m applications has been evaluated using a linear polisher. Results show that the amount of metal dishing and erosion strongly depend on metal density with worse planarization observed for higher metal density. The impact of the planarization result on electrical leakage...
This work investigates the leakage current mechanisms in the Cu damascene structure with a methylsilane-doped low-k chemical vapor deposited (CVD) organosilicate glass (OSG) as the intermetal dielectric (IMD). The leakage between Cu lines was dominated by the Frenkel-Poole emission at higher temperatures and at voltages above 5 V. In the structure using a SiN etching stop layer (ESL), the leakage...
The binding energy of nine alkanoic acids to the major crystal faces of adipic acid were calculated employing molecular modelling techniques. The results indicate that the alkanoic acids bind strongly to the surface when compared to solvents and to adipic acid itself indicating that the alkanoic acids could be potential growth and nucleation inhibitors. The binding energies were found to increase...
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