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In this paper, an analytical model for negative bias temperature instability (NBTI) induced degradation in a triple gate MOSFET is presented. The model is obtained by solving the reaction-diffusion equations multi-dimensionally. The formulation considers the molecular diffusion of hydrogen in the oxide. The geometry dependence of the time exponent of NBTI degradation in triple gate MOSFETs are modeled...
In this work, the effect of negative bias temperature instability (NBTI) on the potential distribution and degradation of floating-body (FB) undoped double-gate (DG) MOSFETs is modeled. The approach is based on solving the one-dimensional (1-D) Poisson's equation considering the NBTI effect in the inversion region. The study includes different stress voltages and device body thicknesses. The accuracy...
In this paper, we propose 4T FinFET SRAM cells which are robust against NBTI effect. The cells, which only use NMOS or PMOS transistors in their structures, are called 4TLLFBNO and 4TDLFBPO, respectively. The simulation results at iso-area design reveal that 4TLLFBNO has the highest read current and 4TDLFBPO has the least power consumption among different cells. Both cells are expected to be robust...
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