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In this paper we will present our latest research results of the integrated RECTENNA (the rectifying antenna) with a THz quantum dot Schottky Diode and an integrated silicon antenna for RF applications. Within this work a specific antenna design, an integrated single patch antenna, will be shown. A layer of Ge quantum dot (QD) was embedded in an integrated Si Schottky barrier diode. The high frequency...
Current density-voltage characteristics of Si p+ -i-n+ Esaki tunneling diodes are presented, which are grown with low-temperature molecular beam epitaxy. The Esaki structures are realized without a postgrowth annealing step. A maximum peak-to-valley current ratio of more than 5 was obtained at room temperature. To the authors' knowledge, this result is the highest reported value for any pure Si tunnel...
After conventional lumped-element de-embedding method (open-short and short-open) for a 1-port active element, the remaining impedance errors are observed above 30 GHz. In order to minimize the de-embedding errors for on-wafer measurement technique, a new de-embedding procedure based on the S-parameter description of the waveguide used as interconnect between device under test and prober head is proposed...
In this paper we will present our latest research results of integrated silicon antennas for automotive radar applications (f = 80 GHz). The design procedure as well as simulation and first measurement results will be given. Within this work two antenna designs, a 1-dimensional array (single line antenna) and a 2-dimensional antenna array (4 lines with 4 patches), will be shown. First measurement...
This paper describes properties of monolithic W-band IMPATT oscillator, their integration into SIMMWICs and proves their basics functionality as mW power sources for simple cost effective and flexible mm-wave systems. In this oscillator system monolithic integrated IMPATT diodes are combined with coplanar waveguide resonator on unthinned silicon wafers for mm-wave operation (around 90 GHz).
Germanium photodiodes grown on a silicon substrate are characterized for various diameters and thicknesses of the active absorption region. High frequency measurements using a vector network analyzer are reported for frequencies up to 45 GHz showing a record bandwidth of 40 GHz.
Experimental results of light emission by defect engineered silicon pn-junctions, operated at room temperature under reverse bias, are presented. The devices emit light from the visible up to the infrared. As will be shown the emission is enhanced by the usage of a defect engineered layer structure. For the present research an improvement up to 280% in efficiency is observed. Defect engineered layers...
We present a comprehensive study of biaxially strained (up to ~3 GPa stress) Si nMOSFETs down to 80 nm gatelength. Well behaved 80 nm devices with expected strain-induced electrical enhancement were demonstrated. Special emphasis was put on investigation of substrate junction leakage and source to drain leakage. In-situ doped wells and channel profiles demonstrated superior substrate junction leakage...
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