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Silicon carbide (SiC) semiconductor diodes are studied for high power and high temperature system applications. Our packaging technology is developing to ensure a working temperature above 300°C for Schottky and PIN diodes. This work presents an investigation on the thermal properties of proposed assembly of SiC die into a ceramic package. Ag micro particles and sintering process were used for the...
Hydrogen finds increasing applications in industry and transportation as a clean fuel, therefore smart hydrogen sensors with high sensitivity are essential. We present results on the fabrication of p-type NiO:Au and NiO:Pd thin-film electrochemical sensors, which are able to detect hydrogen in air at ppb-level concentrations, operating at low temperatures. Even though in general p-type sensors have...
The aim of our work was to produce p-n heterojunction with the high level of optical transmission. P-type NiO and n-type ZnO:Al films deposited by magnetron sputtering were used to fabricate p-n diodes. These were thermally processed in Ar ambient at 400°C in order to obtain high optical transmission and better electrical characteristics. The best diode's parameters were rectifying ratio of 6.7·10...
In this work, thermal properties of Al2O3, AlN, SiC as well as some of SiC die attachment materials are characterized by the laser flash method. The thermal diffusivity, specific heat and thermal conductivity were measured or calculated for the systems consisted of Al2O3 or AlN substrates and SiC structures with die-attach layers between them. The experiments for single materials were carried out...
There are two main technical problems which should be overcome for practical applications of SiC power devices. One of them is the formation of reproducible ohmic contacts and second one is creation connection system between SiC ohmic contacts and package leads. The paper presents a compatibility of materials system for metallization of ohmic contacts to n-SiC and metallization of DBC substrate pads...
The stability of SiC/Ti/Au ohmic contacts as well as the strength of Au wire connection onto n-SiC chips were investigated. The ohmic contact to n-SiC was formed by rapid thermal annealing of Ti film and Au metallization has been applied to form electrical connections using Au wire bonds. Long-term tests of the connections were performed in air at 400degC. Evaluation of electrical parameters as well...
Unique properties of SiC lead this semiconductor for applications in new electronic devices operating at high temperatures, high power and high frequencies. There are a few problems related to the production of high temperature SiC devices. Developing of reliable ohmic contacts to SiC structure as well as a wire connection between the SiC ohmic contact and package leads are the serious tasks for today...
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