The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper a new design and technology of microfluidic capillary sensors is presented. Those sensors can be applied for in situ classification of biological and chemical liquids. The principle of work of capillary sensors is based on changes of light transmission within capillary filled the liquid subject to a local heating pulse. An example of its application can be instant determining of biofuel...
Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series of plasma etching steps has been simulated for different process conditions in order to evaluate the influence of plasma pressure, composition and powering on the FinFET topography. Next, the most important geometric parameters of the FinFETs have been varied and the electrical characteristics...
W artykule przedstawiono wyniki eksperymentalne przeprowadzonych na cienkich warstw materiału magnetycznego Fe81B13.5 Si3.5Co2 z wykorzystaniem lasera ekscymerowego ArF (? = 193 nm). Materiał ten, ze względu na potencjalnie duży współczynnik magnetoelastyczności może mieć szerokie zastosowanie do budowy czujników i aparatury pomiarowej. Osadzenia zostały wykonane na polerowanym podłożu krzemowym o...
A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.