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Two strategies are introduced herein to improve current drivability of tunnel field-effect transistors (TFETs). First, gate-to-channel coupling is increased by ∼22% in terms of effective gate capacitance (Cox) with the help of hemi-cylindrical device architecture. A novel iterative corner rounding process was developed for highly reliable gate dielectric formation without field crowding at sharp corner...
A self-aligned epitaxial base technology is presented which allows fabrication of advanced bipolar devices with 40 to 60 nm basewidths and implementation of novel profile design concepts. The viability of this technology for advanced bipolar circuits has been examined by fabricating ECL ring oscillators, thus demonstrating that fully scaled epi-base devices can be successfully integrated. Devices...
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