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The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size from single cell to 3×3 mm2 large devices are reviewed...
In this paper we introduce prerequisites for the empowerment of social interaction when using a multi-user mobile service. The paper is based on a case study of user experiences of a multiplayer mobile game where the players attend the game via their mobile phones whilst their activity is materialized on a common public display. Based on the results of user evaluation we introduce three enabling factors...
Vertical power DMOSFETs in 3C-SiC, ranging in size from a single-cell to 3×3mm 2 containing 12,000 hexagonal cells, were developed for the first time. Both the drain and leakage currents scale linearly with device size up to a 1×1mm 2 device containing 976 cells. An inversion channel mobility of 40cm 2 /V·s and interface state density of 5×10 12 to 1×10 13 cm...
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