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The resistive switching behavior of Ag/Si3N4/Pt device was observed and studied for the first time. Resistance ratio larger than 4*102 and 104s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si3N4/Pt devices.
The reaction of thin platinum layers with Si(111) to form platinum silicides was monitored in situ by core level electron spectroscopy and spectroscopic ellipsometry. The chemical composition and stoichiometry of the reaction products were identified at crucial stages of the reaction via photoemission while the kinetics of the reaction could be followed via ellipsometry. Utilizing the optical constants...
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