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Schottky Barrier MOSFETs were fabricated on ultra thin body (UTB) SOI with planar and NW-array device geometry. Implantation into Silicide (IIS) was used to lower the Schottky Barrier height for n- and p-type MOSFETs. The enhanced gate control of the NW array reduces Drain Induced Barrier Lowering (DIBL) and improves the subthreshold slope in n-type MOSFETs, whereas the corrected current drops. In...
This paper presents experimental results on metal oxide semiconductor field-effect transistors (MOSFETs) featuring an array of 1000 trigated uniaxially strained nanowires with a cross-sections of 15 × 15 nm2 in combination with a HfO2/TiN gate stack. The high uniaxial strain along the wires reduces the band gap energy by approximately 140 meV and enhances the electron mobility. Ideal inverse subthreshold...
Hole velocity and mobility are extracted from quantum-well (QW) biaxially strained channel metal–oxide–semiconductor field-effect transistors (MOSFETs) on silicon-on-insulator wafers. Devices have been fabricated at sub-100-nm gate length with gate stacks. A significant hole mobility enhancement over the strained Si mobility curve is observed...
The chemical reactions at the higher-k LaLuO3/Ti1NX/poly-Si gate stack interfaces are studied after high temperature treatment. A Ti-rich TiN metal layer degrades the gate stack performance after high temperature annealing. The gate stack containing TiN/LaLuO3 with a near stoichiometric TiN layer is stable during 1000 °C, 5s anneals. Both electrical and structural characterization methods are employed...
Schottky barrier (SB)-MOSFETs with NiSi and epitaxial NiSi2 S/D contacts with gate lengths as small as 20 nm are presented. Epitaxial NiSi2 FETs show higher on-currents than corresponding NiSi devices due to its lower SB height. A striking observation is that tunnelling currents through the fairly large SB decrease at very short gate lengths in SB-MOSFETs, in contrast to the scaling behavior of conventional...
In the last few years, many efforts have been made looking for the improvement of the DC and RF performance of MOS transistors. In this scope, Schottky-Barrier transistors appear as very interesting alternative to conventional devices. In this paper we present the non-linear behavior of dopant segregated n-type SB-MOSFETs with 180 nm channel length.
The implementation of more powerful materials into leading edge CMOS devices allows performance improvements without scaling and without changing the circuit design libraries. This highly motivates the research on novel materials. In this paper we present various transistor fabrication processes like “gate first” and “replacement gate” for different channel stack configurations like strained Si, strained...
In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 muA/mum for n-type devices with As segregation and 427 muA/mum for p-type devices with B segregation, respectively. A detailed high-frequency characterization proves the high performance of the...
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