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La0.7Sr0.3MnO3 (LSMO) suspended bolometers of various geometries have been fabricated using silicon micromachining techniques. Thanks to adequate geometry design and to the operating conditions (temperature and bias current), these uncooled bolometers could be limited by phonon noise and achieve NEP values below 1 pW Hz−1/2 around 300 K.
Planar fully depleted (FD) devices with thin Buried Oxide (BOX) offer the unique ability to incorporate effective back biasing which is a key enabler to build a versatile multi-Vt technology. From a dynamic standpoint, forward back bias lowers Vt and thus boost device performance, whereas reverse back bias increases Vt and thus decreases leakage [1]. From a static point of view the back gate allows...
Over the past decade, the PV industry has witnessed tremendous growth in manufacturing scale and technology advancement, with PV generated electricity cost ever approaching grid parity. Among them, amorphous Si based thin film technology has made substantial progress in demonstrating its inherent advantages in lower material cost, ease of manufacturing and higher energy yield, etc. More recently,...
Next generation flip chip package with <100um fine bump pitch is developed in a cost effective Bump-on-Trace (BOT) package structure for 28nm Si technology node. This is foreseen to be a mainstream for mobile applications in next generations. The key challenges of this new technology include warpage control of molded underfill (MUF) for < 4 mils of thin die, packaging yield due to finer pitch...
We report our results on uncooled La0.7Sr0.3MnO3 (LSMO) suspended bolometers fabricated using silicon micromachining techniques. Suspended LSMO bridges showed very low effective thermal conductance (~10-7 W K-1) and very low NEP value (~ 1 pW Hz-1/2) at 300K.
We report the fabrication and experimental investigation of Ge-SixGe1-x core-shell nanowire (NW) tunneling field effect transistors (TFETs). Low energy ion implantation was used to highly dope the NW TFET source (S) and drain (D). The NW TFETs show ON-state currents of up to ION ~ 5 μA/μm, and the ambipolar behavior is suppressed by achieving asymmetric doping concentrations at S/D. Furthermore, the...
CMOS evolution by lateral lithographic shrinkage has encountered an impediment in that wires do not scale well. As a result, it would appear that the clock race is over and the future of computing lies in multicore or parallel processing. In a prior paper we have explored the implications of Amdahl's figure of merit (FOM), which suggests that for algorithms to successfully demonstrate large throughput...
Semiconductor (e.g. silicon, germanium) nanowires have gained interest as an attractive platform to fabricate field effect transistors devices because of their reduced short channel effects by comparison to planar devices. The realization of high performance nanowire devices however has been stymied primarily by large source (5) and drain (D) contact resistances. Here we report the fabrication and...
Organic light emitting diodes have been fabricated on an active matrix backplane from an 180C processed amorphous Si thin film transistors on polyethylene naphthalate (PEN) substrates. Organic light emitting diodes have been fabricated on the active matrix backplane. The presentation will include organic material development from ARL in the context of future Army applications.
SiGe/Si HBT combining the integration and cost benefits of silicon has came of age as an ideal process for wireless/wired communication applications. To encompass both high-speed analog and wireless circuit applications, production-proven Spice model of HBT that allows the great amount of flexibility and provides excellent model accuracy over a broad range of applications is highly desirable. This...
High-performance band-pass filters are demonstrated on VLSI incorporating interconnects and high resistivity substrate. The resonating frequency of this coupled-line filter increases not only with the increasing spacing-gap but are with increasing IDM thickness. This band-pass filter, low insertion loss and wide bandwidth characteristics, are suitable for the advanced wireless system. The established...
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