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A low noise amplifier with dB-linear variable gain has been designed and fabricated based on high performance SiGe HBT in this paper. Negative feedback technology has been adopted to change the transmission gain of HBT through variable resistance of a forward biased p-i-n diode in the feedback path. The simulation results and measurement results agree well in frequency of 1.8GHz for CDMA application...
A CMOS distributed amplifier incorporating on-chip patterned ground shield (PGS) spiral inductors has been developed using a standard low-cost 0.25-μm CMOS process. Measured results show that this distributed amplifier has an average gain of 7 dB, return loss of more than 10 dB, and noise figure between 4.1-6.1 dB across DC-11 GHz. The amplifier occupies a small chip area of only 1.2×0.8 mm2 including...
We report on the experimental evidence of a fully ballistic nano-FET with a voltage gain higher than 1 which is based on a 1D quantum ballistic conductor. In such a FET, the transconductance and the output conductance are basically modulated by the 1D subbands and the experimental results can theoretically be explained based on the Landauer-Buttiker formalism and the Buttiker model of the saddle-point...
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