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This paper shows that In 13 Se 87 and In 20 Se 80 thin films can be prepared by thermal evaporation technique. Current density-voltage (J-V) characteristics and thermally stimulated currents have been obtained. Coplanar silver electrodes were used. At low voltages, the current density behavior suggests ohmic conductivity, while at higher voltages,...
Amorphous films of the ternary GeTe 4 M x , where M=In and Cu and x represented by 0.05 and 0.10 with thickness about 200nm, have been prepared by thermal evaporation. Dark conductivity measurement on thin films are reported in the temperature range 100-350K. The results indicate that at the first slope which is represented by the range from 250 to 350K, the conduction occurs in the...
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